1. Material Scientific Research and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms arranged in a tetrahedral lattice, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each exhibiting remarkable atomic bond toughness.
The Si– C bond, with a bond power of approximately 318 kJ/mol, is among the strongest in architectural porcelains, conferring superior thermal security, hardness, and resistance to chemical attack.
This robust covalent network leads to a product with a melting factor exceeding 2700 ° C(sublimes), making it one of one of the most refractory non-oxide ceramics offered for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC maintains mechanical toughness and creep resistance at temperature levels over 1400 ° C, where numerous metals and standard ceramics start to soften or deteriorate.
Its reduced coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) enables rapid thermal cycling without disastrous splitting, a crucial feature for crucible performance.
These innate residential or commercial properties come from the balanced electronegativity and comparable atomic dimensions of silicon and carbon, which advertise a very secure and densely loaded crystal structure.
1.2 Microstructure and Mechanical Durability
Silicon carbide crucibles are commonly produced from sintered or reaction-bonded SiC powders, with microstructure playing a definitive role in sturdiness and thermal shock resistance.
Sintered SiC crucibles are created through solid-state or liquid-phase sintering at temperatures over 2000 ° C, usually with boron or carbon ingredients to improve densification and grain limit communication.
This procedure generates a fully thick, fine-grained framework with minimal porosity (
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